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TRANSYS - SILICON PLANAR DARLINGTON POWER TRANSISTORS

Numéro de référence TIP146F
Description SILICON PLANAR DARLINGTON POWER TRANSISTORS
Fabricant TRANSYS 
Logo TRANSYS 





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TIP146F fiche technique
Transys
Electronics
LIMITED
SILICON PLANAR DARLINGTON POWER TRANSISTORS
TIP140F, 141F, 142F NPN
TIP145F, 146F, 147F PNP
TO- 3P Fully Isolated
Plastic Package
B
C
E
For use in Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current (repetitive)
Base Current
Total Power Dissipation @ Tc <25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEB0
IC
ICM
IB
PD
Tj, Tstg
TIP140F
TIP145F
60
60
TIP141F
TIP146F
80
80
5.0
10
20
0.5
60
- 65 to +150
TIP142F
TIP147F
100
100
UNIT
V
V
V
A
A
A
W
ºC
THERMAL RESISTANCE
From Junction to case
Rth (j-c)
1.0
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Cutoff Current
ICBO
VCB =Rated VCBO, IE=0
Collector Cutoff Current
Emitter Cutoff Current
ICEO
IEBO
VCE =1/2 rated VCEO, IB=0
VEB =5.0 V, IC=0
Collector-Emitter Sustaining Voltage
*VCEO (sus)
IC =30mA, IB=0
TIP140F/145F
TIP141F/146F
TIP142F/147F
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
*VCE (sat)
*VBE (on)
IC =5A, IB=10mA
IC =10A, IB =40mA
IC =10A, VCE =4 V
DC Current Gain
*hFE
IC =5A, VCE =4V
IC =10A, VCE =4 V
MIN
60
80
100
1000
500
ºC/W
TYP MAX UNIT
1.0 mA
2.0 mA
2.0 mA
V
V
V
2.0 V
3.0 V
3.0 V
SWITCHING TIME
DESCRIPTION
Turn on time
Turn off time
SYMBOL
ton
toff
TEST CONDITION
IC=10A, IB1=40mA, IB2=
- 40mA, RL=3
MIN TYP MAX UNIT
0.9 µs
4.0 µs
*Pulsed : Pulse duration=200µs, duty cycle=1.5%

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