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MBR780 fiches techniques PDF

Inchange Semiconductor - Schottky Barrier Rectifier ( Diode )

Numéro de référence MBR780
Description Schottky Barrier Rectifier ( Diode )
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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MBR780 fiche technique
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR780
FEATURES
·Schottky Barrier Chip
·Guard Ring Die Construction for Transient Protection
·Low Power Loss/High Efficiency
·High Surge Capability
·High Current CapabilityLow Forward Voltage Drop
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low-voltage,high frequency invertersfree wheeling
and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
VR(RMS)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
IF(AV)
IFSM
Average Rectified Forward Current
(Rated VR) TC= 125
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
80
56
7.5
150
V
V
A
A
TJ Junction Temperature
-50~150
Tstg Storage Temperature Range
-50~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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