(PDF) MBR760 Datasheet - Schottky Barrier Rectifier ( Diode )

Número de pieza	MBR760
Descripción	Schottky Barrier Rectifier ( Diode )
Fabricantes	Inchange Semiconductor
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No Preview Available ! Schottky Barrier Rectifier INCHANGE Semiconductor MBR760 FEATURES ·Schottky Barrier Chip ·Guard Ring Die Construction for Transient Protection ·Low Power Loss/High Efficiency ·High Surge Capability ·High Current Capability，Low Forward Voltage Drop ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage,high frequency inverters，free wheeling and polarrity protection applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage IF(AV) IFSM Average Rectified Forward Current (Rated VR) TC= 125℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half- wave, single phase, 60Hz) 60 42 7.5 150 V V A A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark 1 page

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PDF MBR760 Data sheet ( Hoja de datos )