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PDF MBR1090 Data sheet ( Hoja de datos )
| Número de pieza | MBR1090 | |
| Descripción | Schottky Barrier Rectifier ( Diode ) | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR1090
FEATURES
·Guard -Ring for Stress Protection
·Low Forward Voltage
·Low Power Loss/High Efficiency
·High Surge Capacity
·Low Stored Charge Majority Carrier Conduction
·Pb-Free Packages are Available
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC= 133℃
Peak Repetitive Forward Current
(Rated VR,Square Wave,20kHz) TC= 133℃
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
90
10
20
150
V
A
A
A
TJ Junction Temperature
-65~175 ℃
Tstg Storage Temperature Range
-65~175 ℃
dv/dt Voltage Rate of Change (Rated VR)
10,000 V/μs
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1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR1090.PDF ] | |
Hoja de datos destacado
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