C3M0280090J Datasheet PDF - Cree
| Part Number | C3M0280090J | |
| Description | Silicon Carbide Power MOSFET | |
| Manufacturers | Cree | |
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There is a preview and C3M0280090J download ( pdf file ) link at the bottom of this page. Total 10 Pages | ||
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VDS 900 V
C3M0280090J
ID @ 25˚C
11 A
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
RDS(on) 280 mΩ
N-Channel Enhancement Mode
Features
Package
• New C3M SiC MOSFET technology
• High blocking voltage with low On-resistance
• High speed switching with low capacitances
• New low impedance package with driver source
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant
TAB
Drain
Benefits
• Higher system efficiency
• Reduced cooling requirements
• Increased power density
• Increased system switching frequency
1 2 34 5 6 7
G KS S S S S S
Drain
(TAB)
Applications
• Renewable energy
• Lighting
• High voltage DC/DC converters
• Telecom Power Supplies
• Induction Heating
Gate
(Pin 1)
Driver
Source
(Pin 2)
Power
Source
(Pin 3,4,5,6,7)
Part Number
Package
C3M0280090J
7L D2PAK
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID Continuous Drain Current
900
-8/+18
-4/+15
11
7
ID(pulse) Pulsed Drain Current
22
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Note (1): MOSFET can also safely operate at 0/+15 V
50
-55 to
+150
260
Unit Test Conditions
V VGS = 0 V, ID = 100 μA
V Absolute maximum values
V Recommended operational values
A VGS = 15 V, TC = 25˚C
VGS = 15 V, TC = 100˚C
A Pulse width tP limited by Tjmax
W TC=25˚C, TJ = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
Note
Note (1)
Fig. 19
Fig. 22
Fig. 20
1 C3M0280090J Rev. - , 12-2015
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Typical Performance
-6 -5 -4
-3
VGS = 0 V
VGS = 5 V
-2 -1 0
0
-5
VGS = 10 V
VGS = 15 V
-10
Drain-Source Voltage VDS (V)
Conditions:
TJ = -55 °C
tp < 200 µs
-15
-20
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-6 -5 -4 -3 -2 -1 0
0
VGS = 0 V
VGS = 5 V
VGS = 10 V
VGS = 15 V
-5
-10
Drain-Source Voltage VDS (V)
Conditions:
TJ = 150 °C
tp < 200 µs
-15
-20
Figure 15. 3rd Quadrant Characteristic at 150 ºC
1000
100
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Ciss
Coss
10
Crss
1
0 50 100 150
Drain-Source Voltage, VDS (V)
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
200
-6 -5 -4 -3 -2 -1 0
0
VGS = 0 V
VGS = 5 V
VGS = 10 V
VGS = 15 V
-5
-10
Drain-Source Voltage VDS (V)
Conditions:
TJ = 25 °C
tp < 200 µs
-15
-20
Figure 14. 3rd Quadrant Characteristic at 25 ºC
10
8
6
4
2
0
0 100 200 300 400 500 600 700 800 900 1000
Drain to Source Voltage, VDS (V)
Figure 16. Output Capacitor Stored Energy
1000
100
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Ciss
Coss
10
Crss
1
0 100 200 300 400 500 600 700 800 900
Drain-Source Voltage, VDS (V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 900V)
5 C3M0280090J Rev. - , 12-2015
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for C3M0280090J electronic component. |
| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ C3M0280090J.PDF Datasheet ] | |
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