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C3M0120090J fiches techniques PDF

Cree - Silicon Carbide Power MOSFET

Numéro de référence C3M0120090J
Description Silicon Carbide Power MOSFET
Fabricant Cree 
Logo Cree 





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C3M0120090J fiche technique
VDS 900 V
C3M0120090J
ID @ 25˚C
22 A
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
RDS(on) 120 m
N-Channel Enhancement Mode
Features
Package
New C3M SiC MOSFET technology
High blocking voltage with low On-resistance
High speed switching with low capacitances
New low impedance package with driver source
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
TAB
Drain
Benefits
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
1 2 34 5 6 7
G KS S S S S S
Drain
(TAB)
Applications
Renewable energy
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies
Lighting
Gate
(Pin 1)
Driver
Source
(Pin 2)
Power
Source
(Pin 3,4,5,6,7)
Part Number
Package
C3M0120090J
7L D2PAK
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID Continuous Drain Current
900
-8/+18
-4/+15
22
14
ID(pulse) Pulsed Drain Current
50
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Note (1): MOSFET can also safely operate at 0/+15 V
83
-55 to
+150
260
Unit Test Conditions
V VGS = 0 V, ID = 100 μA
V Absolute maximum values
V Recommended operational values
A VGS = 15 V, TC = 25˚C
VGS = 15 V, TC = 100˚C
A Pulse width tP limited by Tjmax
W TC=25˚C, TJ = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
Note
Note (1)
Fig. 19
Fig. 22
Fig. 20
1 C3M0120090J Rev. - , 12-2015

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