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Numéro de référence | C3M0120090J | ||
Description | Silicon Carbide Power MOSFET | ||
Fabricant | Cree | ||
Logo | |||
1 Page
VDS 900 V
C3M0120090J
ID @ 25˚C
22 A
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
RDS(on) 120 mΩ
N-Channel Enhancement Mode
Features
Package
• New C3M SiC MOSFET technology
• High blocking voltage with low On-resistance
• High speed switching with low capacitances
• New low impedance package with driver source
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant
TAB
Drain
Benefits
• Higher system efficiency
• Reduced cooling requirements
• Increased power density
• Increased system switching frequency
1 2 34 5 6 7
G KS S S S S S
Drain
(TAB)
Applications
• Renewable energy
• EV battery chargers
• High voltage DC/DC converters
• Switch Mode Power Supplies
• Lighting
Gate
(Pin 1)
Driver
Source
(Pin 2)
Power
Source
(Pin 3,4,5,6,7)
Part Number
Package
C3M0120090J
7L D2PAK
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID Continuous Drain Current
900
-8/+18
-4/+15
22
14
ID(pulse) Pulsed Drain Current
50
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Note (1): MOSFET can also safely operate at 0/+15 V
83
-55 to
+150
260
Unit Test Conditions
V VGS = 0 V, ID = 100 μA
V Absolute maximum values
V Recommended operational values
A VGS = 15 V, TC = 25˚C
VGS = 15 V, TC = 100˚C
A Pulse width tP limited by Tjmax
W TC=25˚C, TJ = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
Note
Note (1)
Fig. 19
Fig. 22
Fig. 20
1 C3M0120090J Rev. - , 12-2015
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Pages | Pages 10 | ||
Télécharger | [ C3M0120090J ] |
No | Description détaillée | Fabricant |
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