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Datasheet C2M0045170D-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
C2M Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | C2M0025120D | Silicon Carbide Power MOSFET VDS 1200 V
C2M0025120D
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
ID @ 25˚C
90 A
RDS(on) 25 mΩ
N-Channel Enhancement Mode
Features
Package
• High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel  Cree mosfet | | |
| 2 | C2M0040120D | Silicon Carbide Power MOSFET VDS 1200 V
C2M0040120D
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
ID @ 25˚C
60 A
RDS(on) 40 mΩ
N-Channel Enhancement Mode
Features
Package
• High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel Cree mosfet | | |
| 3 | C2M0045170D | Silicon Carbide Power MOSFET VDS 1700 V
C2M0045170D
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
ID @ 25˚C
72 A
RDS(on) 45 mΩ
N-Channel Enhancement Mode
Features
Package
• High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel Cree mosfet | | |
| 4 | C2M0080120D | Silicon Carbide Power MOSFET
VDS
1200 V
C2M0080120D
Silicon Carbide Power MOSFET TM Z-FET MOSFET
Features Package
ID @ 25˚C 31.6 A RDS(on) 80 mΩ
N-Channel Enhancement Mode • • • • • •
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel an Cree mosfet | | |
| 5 | C2M0160120D | Silicon Carbide Power MOSFET
VDS
1200 V 17.7 A 160 mΩ
C2M0160120D
Silicon Carbide Power MOSFET TM Z-FET MOSFET
Features Package
ID(MAX) @ 25˚C RDS(on)
N-Channel Enhancement Mode • • • • •
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Paralle Cree mosfet | | |
| 6 | C2M0280120D | Silicon Carbide Power MOSFET VDS 1200 V
C2M0280120D
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
ID @ 25˚C 10 A
RDS(on)
280 mΩ
N-Channel Enhancement Mode
Features
Package
• New C2M SiC MOSFET technlogy • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low C Cree mosfet | | |
| 7 | C2M1000170D | Silicon Carbide Power MOSFET
VDS
1700 V
C2M1000170D
Silicon Carbide Power MOSFET TM Z-FET MOSFET
Features Package
ID @ 25˚C 4.9 A RDS(on) 1.0 Ω
N-Channel Enhancement Mode • • • • •
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simp Cree mosfet | |
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