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PDF ACE93C66A Data sheet ( Hoja de datos )
| Número de pieza | ACE93C66A | |
| Descripción | Three-wire Serial EEPROM | |
| Fabricantes | ACE Technology | |
| Logotipo |  |
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ACE93C46A/56A/66A
Three-wire Serial EEPROM
Description
The ACE93C46A/56A/66A series are 1024/2048/4096 bits of serial Electrical Erasable and
Programmable Read Only Memory, commonly known as EEPROM. They are organized as
64/128/256 words of 16 bits each when the ORG pin is connected to VCC (or unconnected) and
128/256/512 words of 8 bits (1 byte) each when the ORG pin is tied to ground. The devices are
fabricated with proprietary advanced CMOS process for low power and low voltage applications.
These devices are available in standard 8-lead DIP, 8-lead JEDEC SOP, 8-lead TSSOP and 8-lead
DFN packages. Our extended VCC range (1.8V to 5.5V) devices enables wide spectrum of
applications.
The ACE93C46A/56A/66A is enabled through the Chip Select pin (CS), and accessed via a 3-wire
serial interface consisting of Data Input (DI), Data Output (DO), and Shift Clock (SCL). Upon receiving
a READ instruction at DI, the address is decoded and the data is clocked out serially on the data
output pin DO. The WRITE cycle is completely self-timed and no separate ERASE cycle is required
before WRITE. The WRITE cycle is only enabled when the part is in the ERASE/WRITE ENABLE
state. Once a device begins its self-timed program procedure, the data out pin (DO) can indicate the
READY/BUSY status by rising chip select (CS).
Features
Standard Voltage and Low Voltage Operation:
ACE 93C46A/56A/66A: VCC = 1.8V to 5.5V
User Selectable Internal Organization:
ACE 93C46A:128 x 8 or 64 x 16
ACE 93C56A:256 x 8 or 128 x 16
ACE 93C66A:512 x 8 or 256 x 16
2 MHz Clock Rate (5V) Compatibility.
Industry Standard 3-wire Serial Interface.
Self-Timed ERASE/WRITE Cycles (5ms max including auto-erase).
Automatic ERAL before WRAL.
Sequential READ Function.
High Reliability: Typical 1 Million Erase/Write Cycle Endurance.
100 Years Data Retention.
Industrial Temperature Range (-40o C to 85o C).
Standard 8-pin DIP/SOP/TSSOP/DFN Pb-free Packages
VER 1.3 1
1 page  
ACE93C46A/56A/66A
Three-wire Serial EEPROM
W RITE
ERAL
ACE93C56A
ACE93C66A
ACE93C46A
ACE93C56A
ACE93C66A
ACE93C46A
ACE93C56A
ACE93C66A
1
1
1
1
1
1
1
1
01 A8-A0
01 A8-A0
00 A6-A0
00 A8-A0
00 A8-A0
A7-A0
A7-A0
A5-A0
A7-A0
A7-A0
D7-D0
D7-D0
D7-D0
00 10XXXXX 10XXXX
00 10XXXXXXX 10XXXXXX
00 10XXXXXXX 10XXXXXX
location An- A0.
D15-D0
D15-D0
D15-D0
Writes memory
location An-A0.
Erases all
memory
locations.
W RAL
ACE93C46A
ACE93C56A
ACE93C66A
1
1
1
00 01XXXXX 01XXXX D7-D0
00 01XXXXXXX 01XXXXXX D7-D0
00 01XXXXXXX 01XXXXXX D7-D0
D15-D0
D15-D0
D15-D0
Writes all
memory
locations.
(A) START BIT (SB)
Each instruction is preceded by a rising edge on Chip Select (CS) with Serial Clock (SCL) being
held Low.
(B) OPERATION CODE (OP-CODE)
Two op-code bits, read on Serial Data Input (DI) during the rising edge of Serial Clock (SCL).
(C) ADDRESS
The address bits of the byte or word that is to be accessed. For the ACE93C46A, the address is
made up of 6 bits for the x16 organization or 7 bits for x8 organization. For the ACE93C56A, the
address is made up of 7 bits for the x16 organization or 8 bits for x8 organization. For the ACE
93C66A, the address is made up of 8 bits for the x16 organization or 9 bits for x8 organization.
(D) DATA
The data bits of the byte or word that is to be accessed. For the ACE93C46A/56A/66A, the data
is made up of 16 bits (word) for the x16 organization or 8 bits (byte) for x8 organization.
Instruction Sets Description
(A) READ
The Read (READ) instruction contains the Address code for the memory location to be read.
After the instruction and address are decoded, data from the selected memory location is
available at the serial output pin DO. Output data changes are synchronized with the rising
edges of serial clock SK. It should be noted that when a dummy bit (logic “0”) precedes the 8- or
16-bit data output string.
(B) ERASE/WRITE ENABLE
To assure data integrity, the part automatically goes into the Erase/Write Disable (EWDS) state
when power is first applied. An Erase/Write Enable (EWEN) instruction must be executed first
before any programming instructions can be carried out. Please note that once in the
Erase/Write Enable state, programming remains enabled until an Erase/Write Disable (EWDS)
instruction is executed or VCC power is removed from the part.
VER 1.3 5
5 Page 
ACE93C46A/56A/66A
Three-wire Serial EEPROM
DC characteristics
Applicable over recommended operating range from T = -40°C to + 85°C, V = As Specified, CL = 1 TTL Gate
A CC
and 100 pF (unless otherwise noted).
Symbol Parameter
Test condition
Min Typ Max Units
VCC1
Supply voltage
1.8 5.5 V
VCC2
Supply voltage
2.5 5.5
VCC3
Supply voltage
2.7 5.5
VCC4
ICC
Supply voltage
Supply
VCC=5.0V,
READ at 1.0
MHz
WRITE at 1.0
MHz
4.5 5.5
0.5 2.0
0.5 1.0
mA
mA
ISB1
Standby current
VCC=1.8V
CS=0V
0.1 µA
ISB2
Standby current
VCC=2.5V
CS=0V
1.5 µA
ISB3
Standby current
VCC=2.7V
CS=0V
1.5 µA
ISB4
ILI
IOL
VIL1
VIH1
VIL2
VIH2
VOL1
VOH1
VOL12
VOH2
Standby current
Input leakage
Output low voltage
Input low voltage
Input high voltage
Input low voltage
Input high voltage
VCC=5.0V
CS=0V
Vin = 0V to VCC
Vin = 0V to VCC
4.5V ≤VCC ≤ 5.5V
1.8V ≤VCC≤ 2.7V
Output low voltage
Output high voltage 4.5V ≤VCC ≤
5.5V
IOL=2.1mA
IOH=-0.4mA
Output low voltage
Output high voltage 1.8V ≤VCC ≤
2.7V
IOL=0.15mA
IOH=-100uA
1.5
0.1 1.0
0.1 1.0
-0.6
2.0
-0.6
VCCX0.7
0.8
VCC+1
VCCX0.3
VCC+1
0.4
µA
µA
µA
V
V
V
2.4 V
0.2 V
VCC-0.2
V
VER 1.3 11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet ACE93C66A.PDF ] | |
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