(PDF) ACE6428D Datasheet - N-Channel Enhancement Mode Field Effect Transistor

Número de pieza	ACE6428D
Descripción	N-Channel Enhancement Mode Field Effect Transistor
Fabricantes	ACE Technology
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No Preview Available ! ACE6428D N-Channel Enhancement Mode Field Effect Transistor Description The ACE6428D uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications. Features  VDS(V)=30V  ID=43A (VGS=10V)  RDS(ON)＜5.5mΩ (VGS=10V)  RDS(ON)＜9.5mΩ (VGS=4.5V)  100% Delta Vsd Tested  100% Rg Tested Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) TA=25 OC TA=100 OC ID 43 27 A Drain Current (Pulse) C IDM 100 Drain Current (Continuous) TA=25 OC TA=70 OC IDSM 11 A 8 Power Dissipation B TA=25 OC TA=100 OC PD 30 W 12 Power Dissipation A TA=25 OC TA=70 OC PDSM 2 W 1.3 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC VER 1.2 1 1 page ACE6428D N-Channel Enhancement Mode Field Effect Transistor VER 1.2 5 5 Page

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PDF ACE6428D Data sheet ( Hoja de datos )