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PDF 7N60K-MT Data sheet ( Hoja de datos )
| Número de pieza | 7N60K-MT | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
7N60K-MT
Preliminary
6.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 7N60K-MT is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in switching power
supplies and adaptors.
FEATURES
* RDS(ON) < 1.4Ω @VGS = 10V, ID = 3.1A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
7N60KL-TF1-T
7N60KG-TF1-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
Pin Assignment
123
GDS
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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7N60K-MT
Preliminary
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS 90%
Power MOSFET
Switching Test Circuit
10%
VGS
tD(ON)
tR
tD(OFF)
tF
Switching Waveforms
VGS
10V
QGS
QG
QGD
Gate Charge Test Circuit
Charge
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
BVDSS
IAS
VDD
ID(t)
tp
VDS(t)
Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R205-025.a
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 7N60K-MT.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 7N60K-MT | N-CHANNEL POWER MOSFET | Unisonic Technologies |
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