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PDF MTN4N65CE3 Data sheet ( Hoja de datos )
| Número de pieza | MTN4N65CE3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C080E3
Issued Date : 2016.09.13
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTN4N65CE3
BVDSS
ID @VGS=10V, TC=25°C
ID @VGS=10V, TC=100°C
RDS(ON)@VGS=10V, ID=2A
650V
4.2A
2.6A
1.7Ω(typ)
Description
The MTN4N65CE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications.
Features
• Low On Resistance
• Simple Drive Requirement
• Fast Switching Characteristic
• RoHS compliant package
Applications
• Adapter
• Switching Mode Power Supply
Ordering Information
Device
MTN4N65CE3-0-UB-X
Package
TO-220
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN4N65CE3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C080E3
Issued Date : 2016.09.13
Revised Date :
Page No. : 5/10
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
1000
Coss Ciss
100
10 Crss
f=1MHz
1
0 5 10 15 20 25
VDS, Drain-to-Source Voltage(V)
30
Static Drain-Source On-resistance vs Ambient Temperature
2.8
2.4 ID=2A,
VGS=10V
2
1.6
1.2
0.8
0.4 RDSON@Tj=25°C : 1.7Ω typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
Maximum Safe Operating Area
100
Operation in this area is
limited by RDS(ON)
10μs
10 100μs
1ms
1 10ms
100ms
0.1
TC=25°C, Tj=150°C, VGS=10V,
RθJC=1.25°C/W, single pulse
DC
0.01
1
10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
25
VGS=10V, RθJC=1.25°C/W
50 75 100 125
TC, Case Temperature(°C)
150
175
Gate Charge Characteristics
10
VDS=130V
8
VDS=325V
6
4 VDS=520V
2
0
0
1.4
ID=4A
4 8 12 16
Qg, Total Gate Charge(nC)
20
Threshold Voltage vs Junction Tempearture
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTN4N65CE3
CYStek Product Specification
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTN4N65CE3.PDF ] | |
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