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ON Semiconductor - Dual Switching Diode

Numéro de référence SBAW56TT1G
Description Dual Switching Diode
Fabricant ON Semiconductor 
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SBAW56TT1G fiche technique
BAW56TT1G,
SBAW56TT1G
Dual Switching Diode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
VR 70 Vdc
IF 200 mAdc
IFM(surge) 500 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR−4 Board (Note 1), TA = 25°C
Derated above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
RθJA
555 °C/W
Total Device Dissipation,
FR−4 Board (Note 2), TA = 25°C
Derated above 25°C
PD
360 mW
2.9 mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
RθJA
345 °C/W
Junction and Storage
Temperature Range
TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
www.onsemi.com
CASE 463
SC−75/SOT−416
STYLE 4
3
ANODE
CATHODE
1
2
CATHODE
MARKING DIAGRAM
A1 M G
G
1
A1 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device
BAW56TT1G
SBAW56TT1G
Package
SC−75/SOT−416
(Pb−Free)
SC−75/SOT−416
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 5
1
Publication Order Number:
BAW56TT1/D

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