|
|
PDF BAV70T Data sheet ( Hoja de datos )
| Número de pieza | BAV70T | |
| Descripción | Surface Mount Switching Diodes | |
| Fabricantes | SeCoS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BAV70T (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
Elektronische Bauelemente
BAS16T/BAW56T/BAV70T/BAV99T
Plastic-Encapsulate Diodes
Surface Mount Switching Diodes
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
* Fast Switching Speed
* For General Purpose Switching Applications
* Ultra-Small Surface Mount Package
* Also Available in Lead Free Version
* High Conductance
MECHANICAL DATA
A
C
TOP VIE W
BC
B
G
H
E
* Case: SOT-523, Molded Plastic
* Case material: UL Flammability Rating 94V-0
* Moisture sensitvity: Leavel 1 per J-STD-020A
* Terminals: Solderable per MIL-STD-202,
Method 208
* Polarity: See Diagrams Below
* Weight: 0.002 grams (approx.)
* Mounting Position: Any
K
N
J DL
M
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D ¾ ¾ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
a 0° 8° ¾
All Dimensions in mm
Maximum Ratings @ TA = 25 CO unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 2)
Repetitive Peak Forward Current
Single diode
Double diode
Non-Repetitive Peak Forward Surge Current
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
IFRM
IFSM
Power Dissipation (Note 2)
Thermal Resistance Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Pd
RθJA
Tj , TSTG
Value
85
60
155
75
500
0.5
150
833
-65 to +150
Unit
V
V
mA
mA
A
mW
oC/W
oC
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 1)
Symbol
V(BR)R
Min
85
Forward Voltage (Note 1)
VF ¾
Leakage Current (Note 1)
IR ¾
Typical Total Capacitance
Reverse Recovery Time
CT ¾
trr ¾
Notes : 1. Short duration test pulse to minimize self-heating effect.
2. Device mounted on FR-4 PC board with recommended pad layout.
Max
¾
0.715
0.855
1.0
1.25
2.0
100
60
30
1.5
4.0
Unit
V
V
mA
mA
mA
nA
pF
ns
Test Condition
IR = 100mA
IF = 1.0mA
IF = 10mA
IF = 50mA
IF = 150mA
VR = 75V
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 25V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100W
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individua
Page 1 of 2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BAV70T.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BAV70 | Diodes |  Multicomp |
| BAV70 | SWITCHING DIODE |  Motorola Semiconductors |
| BAV70 | Surface Mount Switching Diode |  WEITRON |
| BAV70 | High-speed switching diodes |  NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |