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Galaxy Microelectronics - High-speed double Diode

Numéro de référence BAV70T
Description High-speed double Diode
Fabricant Galaxy Microelectronics 
Logo Galaxy Microelectronics 





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BAV70T fiche technique
High-speed double Diode
FEATURES
z Very small plastic SMD package.
Pb
z High switching speed:max.4ns. Lead-free
z Continuous reverse voltage:max.75V.
z Repetitive peak reverse voltage:max.85V.
z Repetitive peak forward current:max.500 mA.
Production specification
BAV70T
APPLICATIONS
z High-speed switching in e.g. surface mounted circuits.
ORDERING INFORMATION
Type No.
Marking
BAV70T
JJ
SOT-523
Package Code
SOT-523
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol Parameter
Value
Units
VRRM
VR
IFM
IFRM
IFSM
Ptot
Tj,Tstg
Peak repetitive reverse voltage
85
Continuous reverse voltage
75
Forward continuous current(MAX.)
single diode loaded 150
Both diodes loaded 75
Repetitive peak forward current
500
Non-repetitive peak forward surge current
@t=1.0μs
@t=1.0ms
@t=1.0s
4
1
0.5
Total power dissipation TS=90;one diode loaded
170
Junction and Storage Temperature
-65 to +150
V
V
mA
mA
A
mW
H023
Rev.A
www.gmicroelec.com
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