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Número de pieza | NCP81155 | |
Descripción | MOSFET Driver | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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MOSFET Driver
The NCP81155 is a high−performance dual MOSFET gate driver
in a small 3 mm x 3 mm package, optimized to drive the gates of both
high−side and low−side power MOSFETs in a buck or buck−boost
application. VCC UVLO ensures the MOSFETs are off when supply
voltages are low. A bi−directional Enable pin provides a fault signal
to the controller when a UVLO fault is detected.
Features
• Space−Efficient 3 mm x 3 mm DFN8 Thermally−Enhanced
Package
• VCC Range of 4.5 V to 13.2 V
• Integrated Bootstrap Diode
• Compatible with 3.3 V and 5 V PWM Inputs
• Bi−Directional Enable Feature Pulls Enable Pin low during a
UVLO Fault.
• Adaptive Anti−Cross Conduction Circuit Protects against
Cross−Conduction during FET Turn−on and Turn−off
• Output Disable Control Turns Off Both MOSFETs
• VCC Undervoltage Lockout
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• E−Cigarettes
• Unmanned Aerial Vehicles (UAV)
www.onsemi.com
1
DFN8
MN SUFFIX
CASE 506BJ
MARKING DIAGRAM
1
81155
ALYWG
G
81155
A
L
Y
W
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
BST 1
8 DRVH
PWM 2
EN 3
FLAG
9
7 SW
6 GND
VCC 4
5 DRVL
(Top View)
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
ORDERING INFORMATION
Device
Package
Shipping†
NCP81155MNTWG DFN8 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
February, 2016 − Rev. P0
1
Publication Order Number:
NCP81155/D
1 page NCP81155
Table 5. ELECTRICAL CHARACTERISTICS (Unless otherwise stated: −10°C < TA < +125°C; 4.5 V < VCC < 13.2 V,
4.5 V < BST−SWN < 13.2 V, 4.5 V < BST < 30 V, 0 V < SWN < 21 V)
Parameter
Test Conditions
Min. Typ. Max.
LOW SIDE DRIVER (VCC = 12 V)
DRVL Turn−Off Propagation Delay
tpdlDRVL
DRVL Turn−On Propagation Delay
tpdhDRVL
DRVL Pull Down Resistance
CLOAD = 3 nF
CLOAD = 3 nF
DRVL to PGND, VCC = PGND
15 TBD
8.0 30
37.5
LOW SIDE DRIVER (VCC = 5 V)
Output Impedance, Sourcing Current
2.5
Output Impedance, Sinking Current
1.0
DRVL Rise Time trDRVL
DRVL Fall Time tfDRVL
DRVL Turn−Off Propagation Delay
tpdlDRVL
DRVL Turn−On Propagation Delay
tpdhDRVL
DRVL Pull Down Resistance
CLOAD = 3 nF
CLOAD = 3 nF
CLOAD = 3 nF
CLOAD = 3 nF
DRVL to PGND, VCC = PGND
30
22
TBD
12
37.5
EN INPUT
Input Voltage High
2.0
Input Voltage Low
1.0
Hysteresis
500
Normal Mode Bias Current
−1 1
Enable Pin Sink Current
4 30
Propagation Delay Time
PWM = 0 V, EN going from 0 V to ENHI to DRVL
rising to 10%
20 40
SW Node
SW Node Leakage Current
TBD
Units
ns
ns
kW
W
W
ns
ns
ns
ns
kW
V
V
mV
mA
mA
ns
mA
www.onsemi.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet NCP81155.PDF ] |
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