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Numéro de référence | TIP140T | ||
Description | NPN Epitaxial Silicon Darlington Transistor | ||
Fabricant | Fairchild Semiconductor | ||
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1 Page
TIP140T / TIP141T / TIP142T
NPN Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.)
• Industrial Use
• Complement to TIP145T/146T/147T
Equivalent Circuit
C
July 2009
B
1 TO-220
1.Base 2.Collector 3.Emitter
R1
R1 ≅ 8kΩ
R2 ≅ 0.12kΩ
R2
E
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: TIP140T
: TIP141T
: TIP142T
60 V
80 V
100 V
VCEO
Collector-Emitter Voltage : TIP140T
: TIP141T
: TIP142T
60 V
80 V
100 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current (DC)
10 A
ICP Collector Current (Pulse)
15 A
IB Base Current (DC)
0.5 A
PC Collector Dissipation (TC=25°C)
80 W
TJ Junction Temperature
150 °C
TSTG
Storage Temperature
-65 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
© 2009 Fairchild Semiconductor Corporation
TIP140T / TIP141T / TIP142T Rev. B2
1
www.fairchildsemi.com
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Pages | Pages 5 | ||
Télécharger | [ TIP140T ] |
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