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Datasheet 1165939-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
116 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1165892 | High power NPN silicon power transistors 1165892
High power NPN silicon power transistors.
These devices are designed for linear amplifiers, series pass regulators, and inductive
switching applications.
Features:
• Forward biased second breakdown current capability IS/b = 2.5 A dc at VCE = 60V dc.
• Pb-free packages.
(TO-3)
Style 1:  Multicomp transistor | | |
| 2 | 1165899 | High power NPN silicon transistors 1165899
TO-3
High power NPN silicon transistors.
Features:
• High voltage capability. • High current capability. • Fast switching speed.
Applications:
Switch mode power supplies. Flyback and forward single transistor low power converters.
Description:
The BUX48/A silicon multiepitaxial mesa N Multicomp transistor | | |
| 3 | 1165939 | Transistors 1165939
Features:
• 70W at 25°C case temperature. • 8A continuous collector current. • Minimum hFE of 1000 at 4V, 4A.
TO-220 Package (Top View)
Pin 2 is in electrical contact with the mounting base.
Absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Rating
Symbol Multicomp transistor | | |
| 4 | 1168ER-0001 | Fixed Inductors Fixed Inductors for Digital Audio Amplifier
EAS30S/EAW30S
Inductance: 10μH~22μH (EAS30S), 10μH×2~22μH×2 (EAW30S)
DIMENSIONS
EAS30S
Recommended patterns
3.0 2.5 3.0
1.2
10.3 Max.
7.6 Max.
11.4 Max.
(Unit: mm)
2.1
6.8
2.1
(Unit: mm)
3.0 8.0 3.0
10.4Max.
13.5Max.  TOKO inductor | | |
| 5 | 1168ER-0002 | Fixed Inductors Fixed Inductors for Digital Audio Amplifier
EAS30S/EAW30S
Inductance: 10μH~22μH (EAS30S), 10μH×2~22μH×2 (EAW30S)
DIMENSIONS
EAS30S
Recommended patterns
3.0 2.5 3.0
1.2
10.3 Max.
7.6 Max.
11.4 Max.
(Unit: mm)
2.1
6.8
2.1
(Unit: mm)
3.0 8.0 3.0
10.4Max.
13.5Max. TOKO inductor | |
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