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PDF TIP41C Data sheet ( Hoja de datos )
| Número de pieza | TIP41C | |
| Descripción | Complementary Silicon Power Transistor | |
| Fabricantes | nELL | |
| Logotipo |  |
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 1. 100V, 6A, NPN Transistor, TO-220  Hay una vista previa y un enlace de descarga de TIP41C (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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SEMICONDUCTOR
TIP41 (NPN) Series
TIP42 (PNP) Series RRooHHSS
Nell High Power Products
Complementary Silicon Power Transistor
6A/40~100V/65W
FEATURES
Complementary NPN-PNP transistors
Low collector-emitter saturation voltage
Satisfactory linearity of foward current
transfer ratio hFE
TO-220AB package which can be installed
to the heat sink with one screw
Collector - Emitter Saturation Voltage:
VCE(sat) = 1.5Vdc (MAX.) @ IC = 6A
Collector - Emitter Saturation Voltage:
VCEO(sus) = 40Vdc (Min.) - TIP41,TIP42
= 60Vdc (Min.) - TIP41A,TIP42A
= 80Vdc (Min.) - TIP41B, TIP42B
= 100Vdc (Min.) - TIP41C, TIP42C
DC Current Gain hFE = 30 (Min.) @ Ic = 0.3A
High Current Gain - Bandwidth product
fT = 3.0 MHz (Min.) @ Ic=0.5A
APPLICATIONS
Audio amplifier
General purpose switching and amplifier
C
B
C E TO-220AB
C
B
E
TIP41(NPN)
C
B
E
TIP42(PNP)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C)
SYMBOL
PARAMETER
VCBO
Collector to base voltage (IE = 0)
TIP41
TIP42
40
VALUE
TIP41A TIP41B TIP41C
TIP42A TIP42B TIP42C
60 80 100
UNIT
VCEO
VEBO
IC
Collector to emitter voltage (IB = 0)
Emitter to base voltage (IC = 0)
Collector current
40 60 80 100 V
5
6
ICM Collector peak current (tp < 0.3mS)
10 A
IB Base current
2
PC Collector power dissipation @TC = 25°C
(Derate above 25°C)
@TA = 25°C
65 (0.52)
2.0 (0.016)
W(W/°C)
Tj Junction temperature
Tstg Storage temperature
150
-65 to 150
ºC
E Unclamped inductive load energy (Note 1)
62.5
mJ
Note: 1. This rating is based on the capability of the transistor to operate safely is a circuit of:
IC = 2.5A, L = 20mH, RBE = 100Ω, P.R.F. = 10 Hz, VCC = 10V
THERMAL CHARACTERISTICS (TC = 25°C)
SYMBOL
PARAMETER
Rth(j-c)
Maximum thermal resistance, junction to case
Rth(j-a)
Maximum thermal resistance, junction to ambient
VALUE
1.67
57
UNIT
ºC/W
ºC/W
www.nellsemi.com
Page 1 of 5
1 page  
SEMICONDUCTOR
TIP41 (NPN) Series
TIP42 (PNP) Series RRooHHSS
Nell High Power Products
Fig.12 Effects of base-emitter resistance
10
1.0
IC ≈ ICES
100
VCE = 30V
IC = 10×ICES
10
IC = 2×ICES
1.0
0.1
20
(Typical ICES values
obtained from flgure 11)
40 60 80 100 120 140
160
Junction temperature, TJ (˚C)
Fig.13 Thermal response
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
Zth(j-c) = r(t) Rth(j-c)
Rth(j-c) (t)=1.67°C/W Max.
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(PK) - TC = P(PK) Zth(j-c)(t)
P(PK)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
0.01 0.02
0.05 1.0 0.2
0.5 1.0 2.0
5.0 10 20
50 100 200
500 1000
Time, t (mS)
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
4.06 (0.160)
3.56 (0.140)
C
BE
123
16.13 (0.635)
15.87 (0.625)
3.68 (0.145)
3.43 (0.135)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
14.22 (0.560)
13.46 (0.530)
0.56 (0.022)
0.36 (0.014)
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
15.32 (0.603)
14.55 (0.573)
2.79 (0.110)
2.54 (0.100)
www.nellsemi.com
Page 5 of 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TIP41C.PDF ] | |
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