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PDF BD912 Data sheet ( Hoja de datos )
| Número de pieza | BD912 | |
| Descripción | Complementary Silicon Power Transistors | |
| Fabricantes | nELL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BD912 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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SEMICONDUCTOR
BD911(NPN)
BD912(PNP) RRooHHSS
Nell High Power Products
Complementary Silicon Power Transistors
(15A / 100V / 90W)
FEATURES
Designed for general-purpose switching
and amplifier applications.
DC current gain specified to 10A
High current gain-Band width product:
fT = 3 MHz (Min.) @ lC = 0.5 Adc
Excellent safe operating area
DESCRIPTION
The BD911 is a silicon epitaxial-base planar NPN
transistor in TO-220AB package.
lt is intended for use in general-purpose amplifier
and switding applications.
The complementary PNP type is BD912.
12 3
TO-220AB
INTERNAL SCHEMATIC DIAGRAM
C (2)
(1)
B
(3)
E
BD911(NPN)
C (2)
(1)
B
(3)
E
BD912(PNP)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
VCBO
Collector to base voltage (IE = 0)
VCEO
Collector to emitter voltage (IB = 0)
VEBO
Emitter to base voltage (IC = 0)
IC Collector current
IB Base current
Total power dissipation
PC
Derate above 25ºC
TC= 25°C
Tj Junction temperature
Tstg Storage temperature
*For PNP types voltage and current values are negative.
VALUE
100
100
5.0
15
5
90
0.72
150
-55 to 150
UNIT
V
A
W
W/ºC
ºC
THERMAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
Rth(j-c)
Maximum thermal resistance, junction to case
VALUE
1.40
UNIT
ºC/W
www.nellsemi.com
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BD912.PDF ] | |
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