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TIP41C Datasheet دیتاشیت PDF دانلود

دیتاشیت - DRIX SEMICONDUCTOR - NPN SILICON POWER TRANSISTOR

شماره قطعه TIP41C
شرح مفصل NPN SILICON POWER TRANSISTOR
تولید کننده DRIX SEMICONDUCTOR 
آرم DRIX SEMICONDUCTOR 


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TIP41C شرح
NPN SILICON POWER TRANSISTOR TIP41C
65 W at 25ºC Case Temperature
6A Continuous Collector Current
10A Peak Collector Current
100V Collector-Emitter Voltage
Isolated transistor package available
on request
Custom selections possible
Absolute maximum ratings at 25ºC case temperature (unless otherwise noted)
RATING
Collector-Base Voltage (Ie=0)
SYMBOL
VCBO
VALUE
140
UNIT
V
Collector-Emitter Voltage (Ib=0)
VCEO
100 V
Emitter-base voltage (reverse)
Continuous collector current
Peak collector current (max 300µs, duty cycle 2%)
Continuous base current
Continuous device dissipation at max 25ºC case temperature (see note 1)
Continuous device dissipation at max 25ºC free air temperature (see note 2)
Unclamped inductive load energy (see note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
VEBO
IC
ICM
IB
P tot
P tot
½LIC2
Tj
T stg
TL
5
6
10
3
65
2
62.5
-65 to
+150
-65 to
+150
250
V
A
A
A
W
W
mJ
ºC
ºC
ºC
NOTES
1. Derate linearly to 150ºC case temperature at t he rate of 0.52 W/ºC. This rating is not applicable to isolated packages.
2. Derate linearly to 150ºC free air temperature at the rate of 16 mW/ºC
3. This rating is based on the capability of the transistor to operate safely in a circuit of: L=20 mH, IB(on)=40mA,
RBE = 270 ohm, VBE(off) = 0, RS = 0.1 ohm, ICC = 2.5A., duty max 1%.
DRIX SEMICONDUCTOR DATASHEET

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