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Numéro de référence | TIP32C | ||
Description | Complementary Silicon Power Transistor | ||
Fabricant | nELL | ||
Logo | |||
1 Page
SEMICONDUCTOR
TIP31 (NPN) Series
TIP32 (PNP) Series RRooHHSS
Nell High Power Products
Complementary Silicon Power Transistor
3A/40~100V/40W
FEATURES
Complementary NPN-PNP transistors
Low collector-emitter saturation voltage
Satisfactory linearity of foward current
transfer ratio hFE
TO-220AB package which can be installed
to the heat sink with one screw
Collector - Emitter Saturation Voltage:
VCE(sat) = 1.2Vdc (MAX.) @ IC = 3A
Collector - Emitter Saturation Voltage:
VCEO(sus) = 40Vdc (Min.) - TIP31,TIP32
= 60Vdc (Min.) - TIP31A,TIP32A
= 80Vdc (Min.) - TIP31B, TIP32B
= 100Vdc (Min.) - TIP31C, TIP32C
DC Current Gain hFE = 25 (Min.) @ Ic = 1.0A
High Current Gain - Bandwidth product
fT = 3.0 MHz (Min.) @ Ic=0.5A
APPLICATIONS
Audio amplifier
General purpose switching and amplifier
C
B
C E TO-220AB
C
B
E
TIP31(NPN)
C
B
E
TIP32(PNP)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C)
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
PC
Tj
Tstg
E
Collector to base voltage (IE = 0)
Collector to emitter voltage (IB = 0)
Emitter to base voltage (IC = 0)
Collector current
Collector peak current (tp < 5mS)
Base current
Collector power dissipation
(Derate above 25°C)
Junction temperature
@TC = 25°C
@TA = 25°C
Storage temperature
Unclamped inductive load energy (Note 1)
TIP31
TIP32
40
VALUE
TIP31A TIP31B TIP31C
TIP32A TIP32B TIP32C
60 80 100
UNIT
40 60 80 100 V
5
3
5A
1
40 (0.32)
2.0 (0.016)
W(W/°C)
150
-65 to 150
ºC
32 mJ
Note: 1. This rating is based on the capability of the transistor to operate safely is a circuit of:
IC = 1.8A, L = 20mH, RBE = 100Ω, P.R.F = 10Hz, VCC = 20V
www.nellsemi.com
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Pages | Pages 5 | ||
Télécharger | [ TIP32C ] |
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