TIP31G Datasheet PDF - ON Semiconductor
| Part Number | TIP31G | |
| Description | Complementary Silicon Plastic Power Transistors | |
| Manufacturers | ON Semiconductor | |
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TIP31G, TIP31AG, TIP31BG,
TIP31CG (NPN),
TIP32G, TIP32AG, TIP32BG,
TIP32CG (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
• High Current Gain − Bandwidth Product
• Compact TO−220 Package
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
TIP31G, TIP32G
TIP31AG, TIP32AG
TIP31BG, TIP32BG
TIP31CG, TIP32CG
VCEO
Vdc
40
60
80
100
Collector−Base Voltage
TIP31G, TIP32G
TIP31AG, TIP32AG
TIP31BG, TIP32BG
TIP31CG, TIP32CG
VCB Vdc
40
60
80
100
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
VEB 5.0 Vdc
IC 3.0 Adc
ICM 5.0 Adc
IB 1.0 Adc
PD
40 W
0.32 W/°C
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
2.0 W
0.016
W/°C
Unclamped Inductive Load Energy
(Note 1)
E 32 mJ
Operating and Storage Junction Tem-
perature Range
TJ, Tstg – 65 to + 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
RqJA
62.5 °C/W
Thermal Resistance, Junction−to−Case
RqJC
3.125 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
September, 2015 − Rev. 16
1
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3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
40−60−80−100 VOLTS,
40 WATTS
PNP
COLLECTOR
2,4
NPN
COLLECTOR
2,4
1
BASE
1
BASE
3
EMITTER
3
EMITTER
4
1
23
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
TIP3xxG
AYWW
TIP3xx
xx
A
Y
WW
G
= Device Code
= 1, 1A, 1B, 1C,
2, 2A, 2B, 2C,
= Assembly Location
= Year
= Work Week
Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
Publication Order Number:
TIP31A/D
|
| |
 
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,
TIP32CG (PNP)
500
300 TJ = 150°C
100 25°C
70 - 55°C
50
30
VCE = 2.0 V
10
7.0
5.0
0.03
0.05 0.07 0.1
0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
3.0
2.0
1.6
1.2 IC = 0.3 A
1.0 A
TJ = 25°C
3.0 A
0.8
0.4
0
1.0 2.0
5.0 10 20 50 100 200
IB, BASE CURRENT (mA)
500 1000
Figure 9. Collector Saturation Region
1.4
TJ = 25°C
1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6 VBE @ VCE = 2.0 V
0.4
0.2 VCE(sat) @ IC/IB = 10
0
0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 10. “On” Voltages
2.0 3.0
+ 2.5
+ 2.0 *APPLIES FOR IC/IB ≤ hFE/2
+ 1.5 TJ = - 65°C TO + 150°C
+ 1.0
+ 0.5 *qVC FOR VCE(sat)
0
- 0.5
- 1.0
- 1.5 qVB FOR VBE
- 2.0
- 2.5
0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0
IC, COLLECTOR CURRENT (AMP)
2.0 3.0
Figure 11. Temperature Coefficients
103
VCE = 30 V
102
TJ = 150°C
101
100 100°C
10-1 REVERSE
FORWARD
10-2 25°C
10-3
- 0.4 - 0.3 - 0.2 - 0.1
ICES
0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
VBE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut−Off Region
107
106
105 IC ≈ ICES
IC = 10 x ICES
VCE = 30 V
104 IC = 2 x ICES
103 (TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
102
20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Effects of Base−Emitter Resistance
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| Information | Total 7 Pages | |
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| Download | [ TIP31G.PDF Datasheet ] | |
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