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Numéro de référence | TIP110 | ||
Description | Darlington Transistors | ||
Fabricant | Multicomp | ||
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1 Page
TIP110, TIP115
Darlington Transistors
Features:
Designed for general-purpose amplifier and low speed switching applications.
• Collector-emitter sustaining voltage-VCEO (sus) = 60V (Minimum) - TIP110, TIP115.
• Collector-emitter saturation voltage-VCE (sat) = 2.5V (Maximum) at IC = 2.0A.
• Monolithic construction with built-in-base-emitter shunt resistor.
Pin 1. Base
2. Collector
3. Emitter
4. Collector (Case)
Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Peak
Base Current
Total Power Dissipation at TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Characteristics
Characteristic
Thermal Resistance Junction to Case
Dimension
A
B
C
D
E
F
G
H
I
J
K
L
M
O
Minimum Maximum
14.68
15.31
9.78 10.42
5.01 6.52
13.06
14.62
3.57 4.07
2.42 3.66
1.12 1.36
0.72 0.96
4.22 4.98
1.14 1.38
2.20 2.97
0.33 0.55
2.48 2.98
3.70 3.90
Dimensions : Millimetres
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
PD
TJ, TSTG
TIP110
TIP115
60
5.0
2.0
4.0
50
50
0.4
-65 to +150
Unit
V
A
mA
W
W/°C
°C
Symbol Maximum
Rθjc 2.5
Unit
°C/W
NPN
TIP110
PNP
TIP115
2.0 Ampere
Darlington
Complementary Silicon
Power Transistors
60 Volts
50 Watts
TO-220
Page 1
16/03/06 V1.0
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Pages | Pages 5 | ||
Télécharger | [ TIP110 ] |
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