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Numéro de référence | TIP29A | ||
Description | NPN SILICON POWER TRANSISTORS | ||
Fabricant | Bourns | ||
Logo | |||
1 Page
TIP29, TIP29A, TIP29B, TIP29C
NPN SILICON POWER TRANSISTORS
Designed for Complementary Use with the
TIP30 Series
30 W at 25°C Case Temperature
1 A Continuous Collector Current
3 A Peak Collector Current
Customer-Specified Selections Available
This series is obsolete and
not recommended for new designs.
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
TIP29
80
Collector-base voltage (IE = 0)
ECollector-emitter voltage (IB = 0)
ETEmitter-base voltage
Continuous collector current
LPeak collector current (see Note 1)
OContinuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
SContinuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
BOperating junction temperature range
OStorage temperature range
TIP29A
TIP29B
TIP29C
TIP29
TIP29A
TIP29B
TIP29C
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Ptot
½LIC2
Tj
Tstg
Lead temperature 3.2 mm from case for 10 seconds
TL
100
120
140
40
60
80
100
5
1
3
0.4
30
2
32
-65 to +150
-65 to +150
250
V
V
V
A
A
A
W
W
mJ
°C
°C
°C
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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Pages | Pages 4 | ||
Télécharger | [ TIP29A ] |
No | Description détaillée | Fabricant |
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