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Numéro de référence | D45H5 | ||
Description | Power Transistor | ||
Fabricant | Multicomp | ||
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1 Page
Power Transistor
Description:
Plastic PNP TO-220 silicon power transistor is designed for
various specific and general purpose applications such as output
and driver stages of amplifiers operating at frequencies from DC
to greater than 1MHz series shunt and switching regulators low
and high frequency inverters/converters and many others.
Features:
• Very low collector saturation voltage
• Excellent linearity
• Fast switching
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Total Device Dissipation at Tc = 25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range
Symbol
VCEO
VCES
VEBO
IC
IB
PD
Rating
45
45
5
10
2
50
0.4
Tj, Tstg -55 to +150
Unit
V
A
A
W
W/°C
°C
PNP
Emitter
3
2
Collector
1
Base
Pin Configuration:
1. Base
2. Collector
3. Emitter
4. Collector
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector - Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON Characteristics
V(BR)CEO
ICES
IEBO
IC=30mA, IB=0
VCE=45V, VBE=0
VEB=5V, IC=0
DC Current Gain
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
hFE
VCE(sat)
VBE(sat)
VCE=1V, IC=2A
VCE=1V, IC=4A
IC=8A, IB=400mA
IC=8A, IB=800mA
Min. Max. Unit
45 -
V
- 10
μA
- 100
60 -
40 -
-1
1.5
-
-
V
www.element14.com
www.farnell.com
www.newark.com
Page <1>
23/04/13 V1.0
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Pages | Pages 2 | ||
Télécharger | [ D45H5 ] |
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