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Multicomp - High power NPN silicon transistors

Numéro de référence 1165899
Description High power NPN silicon transistors
Fabricant Multicomp 
Logo Multicomp 





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1165899 fiche technique
1165899
TO-3
High power NPN silicon transistors.
Features:
High voltage capability.
High current capability.
Fast switching speed.
Applications:
Switch mode power supplies.
Flyback and forward single transistor low power converters.
Description:
The BUX48/A silicon multiepitaxial mesa NPN transistors mounted respectively in TO-3 fully
isolated package. They are particulary intended for switching and industrial applications from
single and three-phase mains.
Internal Schematic Diagram
For TO-3 Package
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage (RBE = 10)
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Collector Peak Current Non Repetitive (tp <20µs)
Base Current
Base Peak Current
Total Dissipation at TC = 25°C
Storage Temperature
Maximum Operating Junction Temperature
http://www.farnell.com
http://www.newark.com
http://www.cpc.co.uk
Symbol
VCER
VCES
VCEO
VEBO
IC
ICM
ICP
IB
IBM
Ptot
Tstg
Tj
Page <1>
Value
850
400
7
15
30
55
4
20
175
-65 to 200
200
Unit
V
A
W
°C
22/10/08 V1.1

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