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PDF 2N5192R Data sheet ( Hoja de datos )
| Número de pieza | 2N5192R | |
| Descripción | NPN SILICON POWER TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N5192R (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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2N5190 2N5190R
2N5191 2N5191R
2N5192 2N5192R
NPN SILICON POWER TRANSISTOR
TO-126 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5190 series,
2N5190R series types are silicon NPN epitaxial base
power transistors designed for medium power amplifier
and switching applications.
Part numbers with the suffix “R” have the base
and emitter leads reversed from the standard lead
configuration. All other specifications are identical
to the standard part numbers.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
ΘJC
2N5190 2N5191 2N5192
40 60 80
40 60 80
5.0
4.0
7.0
1.0
40
-65 to +150
3.12
ELECTRICAL CHARACTERISTICS: (TC=25°C)
SYMBOL TEST CONDITIONS
ICBO
VCB=Rated VCBO
ICEV
VCE=Rated VCEO, VEB=1.5V
ICEO
VCE=Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=100mA
VCE(SAT) IC=1.5A, IB=150mA
VCE(SAT) IC=4.0A, IB=1.0A
VBE(ON)
VCE=2.0V, IC=1.5A
hFE VCE=2.0V, IC=1.5A
hFE VCE=2.0V, IC=4.0A
fT VCE=10V, IC=1.0A, f=1.0MHz
2N5190
MIN MAX
- 100
- 100
- 1.0
- 1.0
40 -
- 0.6
- 1.4
- 1.2
25 100
10 -
2.0 -
2N5191
MIN MAX
- 100
- 100
- 1.0
- 1.0
60 -
- 0.6
- 1.4
- 1.2
25 100
10 -
2.0 -
2N5192
MIN MAX
- 100
- 100
- 1.0
- 1.0
80 -
- 0.6
- 1.4
- 1.2
20 80
7.0 -
2.0 -
UNITS
V
V
V
A
A
A
W
°C
°C/W
UNITS
μA
μA
mA
mA
V
V
V
V
MHz
R1 (22-August 2012)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N5192R.PDF ] | |
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