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BD237G fiches techniques PDF

ON Semiconductor - Plastic Medium Power Bipolar Transistors

Numéro de référence BD237G
Description Plastic Medium Power Bipolar Transistors
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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BD237G fiche technique
BD237G (NPN),
BD234G, BD238G (PNP)
Plastic Medium Power
Bipolar Transistors
Designed for use in 5.0 to 10 W audio amplifiers and drivers
utilizing complementary or quasi complementary circuits.
Features
High DC Current Gain
Epoxy Meets UL 94 V0 @ 0.125 in
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
BD234G
DB237G, BD238G
VCEO
45
80
Vdc
Collector−Base Voltage
BD234G
DB237G, BD238G
VCBO
60
100
Vdc
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ TC = 25_C
Operating and Storage Junction
Temperature Range
VEBO
IC
IB
PD
TJ, Tstg
5.0
2.0
1.0
25
– 55 to + 150
Vdc
Adc
Adc
W
_C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
RqJC
Max
5.0
Unit
_C/W
http://onsemi.com
2.0 AMPERES
POWER TRANSISTORS
25 WATTS
PNP
COLLECTOR
2, 4
NPN
COLLECTOR
2, 4
3
BASE
3
BASE
1
EMITTER
1
EMITTER
123
TO−225
CASE 77−09
STYLE 1
MARKING DIAGRAM
YWW
BD23xG
Y = Year
WW = Work Week
BD23x = Device Code
x = 4, 7 or 8
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data
sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 17
1
Publication Order Number:
BD237/D

PagesPages 5
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