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BD435G Datasheet دیتاشیت PDF دانلود

دیتاشیت - ON Semiconductor - Plastic Medium-Power Silicon NPN Transistors

شماره قطعه BD435G
شرح مفصل Plastic Medium-Power Silicon NPN Transistors
تولید کننده ON Semiconductor 
آرم ON Semiconductor 


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BD435G شرح
BD435G, BD437G, BD439G,
BD441G
Plastic Medium-Power
Silicon NPN Transistors
This series of plastic, medium−power silicon NPN transistors can be
used for amplifier and switching applications.
Features
Complementary Types are BD438 and BD442
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
BD435G
BD437G
BD439G
BD441G
VCEO
32
45
60
80
Vdc
Collector−Base Voltage
BD435G
BD437G
BD439G
BD441G
VCBO
32
45
60
80
Vdc
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
VEBO
5.0
Vdc
IC 4.0 Adc
IB 1.0 Adc
PD
36 W
288 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to + 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
RqJC
Max
3.5
Unit
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 17
1
http://onsemi.com
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
COLLECTOR 2, 4
BASE 3
EMITTER 1
TO−225
CASE 77−09
STYLE 1
123
MARKING DIAGRAM
YWW
BD4xxG
Y
WW
BD4xx
G
= Year
= Work Week
= Device Code
xx = 35, 37, 37T, 39, 41
= Pb−Free Package
ORDERING INFORMATION
Device
BD435G
BD437G
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
500 Units/Box
500 Units/Box
BD437TG
BD439G
TO−225
(Pb−Free)
TO−225
(Pb−Free)
50 Units/Rail
500 Units/Box
BD441G
TO−225
(Pb−Free)
500 Units/Box
Publication Order Number:
BD437/D

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