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Numéro de référence | BC549 | ||
Description | NPN SILICON PLANAR EPITAXIAL TRANSISTORS | ||
Fabricant | CDIL | ||
Logo | |||
1 Page
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CB E
BC549,A.B,C
BC550,A,B,C
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
Low Noise Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Power Dissipation at Ta=25ºC
PD
Derate Above 25ºC
Power Dissipation at Tc=25ºC
PD
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
Tj, Tstg
BC549
30
30
5.0
100
625
5.0
1.5
12
- 55 to +150
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Rth (j-c)
Rth (j-a)
83.3
200
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
SYMBOL
VCEO
TEST CONDITION
IC=1mA, IB=0
BC549
Collector Base Voltage
VCBO
BC550
IC=100µA, IE=0
BC549
Emitter Base Voltage
VEBO
BC550
IE=10µA, IC=0
Collector Cut Off Current
Emitter Cut Off Current
ICBO
VCB=30V, IE=0
VCB=30V, IE=0, Ta= +125ºC
IEBO
VEB=4V, IC=0
MIN
30
45
30
50
5.0
BC549_550Rev_1 081205E
BC550
45
50
TYP MAX
15
5.0
15
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
V
V
nA
µA
nA
Continental Device India Limited
Data Sheet
Page 1 of 5
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Pages | Pages 5 | ||
Télécharger | [ BC549 ] |
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