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PDF DMN3020UFDF Data sheet ( Hoja de datos )

Número de pieza DMN3020UFDF
Descripción 30V N-CHANNEL ENHANCEMENT MODE MOSFET
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DMN3020UFDF
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
30V
RDS(ON) Max
19m@ VGS = 4.5V
25mΩ @ VGS = 2.5V
40mΩ @ VGS = 1.8V
120mΩ @ VGS = 1.5V
ID Max
TC = +25°C
15A
14A
10A
6A
Features
0.6mm Profile Ideal for Low Profile Applications
PCB Footprint of 4mm2
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Battery Management Application
Power Management Functions
DC-DC Converters
Mechanical Data
Case: U-DFN2020-6 (Type F)
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.007 Grams (Approximate)
U-DFN2020-6 (Type F)
D
ESD PROTECTED
Top View
Bottom View
Pin Out
Bottom View
G
Gate Protection
Diode
S
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMN3020UFDF-7
DMN3020UFDF-13
Case
U-DFN2020-6 (Type F)
U-DFN2020-6 (Type F)
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
2016
D
Feb Mar
23
DMN3020UFDF
Datasheet number: DS38208 Rev. 2 - 2
2F = Product Type Marking Code
2F
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
2017
E
Apr
4
2018
F
May
5
Jun
6
1 of 7
www.diodes.com
2019
G
Jul
7
Aug
8
2020
H
Sep
9
2021
I
2022
J
Oct Nov Dec
OND
February 2016
© Diodes Incorporated

1 page




DMN3020UFDF pdf
100
RDS(ON) Limited
10
PW =100µs
DMN3020UFDF
1 PW =1ms
PW =10ms
0.1
0.01
TJ(Max) = 150PW =100ms
TA = 25
PW =1s
Single Pulse
DUT on 1*MRP Board
PW =10s
VGS= 4.5V
DC
0.01 0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13. SOA, Safe Operation Area
100
1
D=0.7
D=0.5
D=0.3
0.1 D=0.1
D=0.05
0.01
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.001
0.0001
0.001
D=0.9
RθJA(t) = r(t) * RθJA
RθJA = 171/W
Duty Cycle, D = t1 / t2
0.01 0.1
1
t1, PULSE DURATION TIME (sec)
Figure 14. Transient Thermal Resistance
10
100
1000
DMN3020UFDF
Datasheet number: DS38208 Rev. 2 - 2
5 of 7
www.diodes.com
February 2016
© Diodes Incorporated

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