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Numéro de référence | CJ3420 | ||
Description | MOSFETS | ||
Fabricant | JCST | ||
Logo | |||
1 Page
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
CJ3420 N-Channel Enhancement Mode Field Effect Transistor
DESCRIPTION
The CJ3420 uses advanced trench technology to provide excellent
RDS(on).This device is suitable for use as a uni-directional or bi-directional
load switch.
MARKING: R20
SOT-23
1. GATE
2. SOURCE
3. DRAIN
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Body-Diode Continuous Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
IS
PD
RθJA
TJ
Tstg
Value
20
±12
6
25
2
0.35
357
150
-55 ~+150
Unit
V
A
W
℃/W
℃
B,May,2011
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Pages | Pages 3 | ||
Télécharger | [ CJ3420 ] |
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