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PDF CJ201NL Data sheet ( Hoja de datos )
| Número de pieza | CJ201NL | |
| Descripción | NPN Transistor | |
| Fabricantes | JCST | |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
CJ201NL TRANSISTOR (NPN)
SOT–23
FEATURES
z High Collector Current Capability
z Low Collector-emitter Saturation Voltage
z High Efficiency Leading to Less Heat Generation
z Reduced PCB Requirements
z Alternatived Effectively to MOSFETS in Specific Applications
APPLICATIONS
z Power Management
z Peripheral Driver
MARKING: 201N
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO Collector-Base Voltage
30 V
VCEO Collector-Emitter Voltage
20 V
VEBO Emitter-Base Voltage
5V
IC Collector Current
1A
PC Collector Power Dissipation
300 mW
RΘJA Thermal Resistance From Junction To Ambient
417
℃/W
Tj Junction Temperature
150 ℃
Tstg Storage Temperature
-55～+150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100µA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100µA, IC=0
Collector cut-off current
ICBO
VCB=30V, IE=0
Emitter cut-off current
IEBO
VEB=4V, IC=0
hFE(1)
VCE=2V, IC=100mA
DC current gain
hFE(2)
VCE=2V, IC=500mA
hFE(3)
VCE=2V, IC=1A
VCE(sat)1 IC=100mA, IB=1mA
Collector-emitter saturation voltage
VCE(sat)2
VCE(sat)3
IC=500mA, IB=50mA
IC=750mA, IB=15mA
VCE(sat)4* IC=1A, IB=50mA
Base-emitter saturation voltage
VBE(sat)* IC=1A, IB=100mA
Base-emitter turn-on voltage
VBE(on)
VCE=2V, IC=100mA
Transition frequency
fT VCE=10V,IC=100mA, f=100MHz
Collector output capacitance
Cob VCB=10V, IE=0, f=1MHz
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
1. BASE
2. EMITTER
3. COLLECTOR
Min Typ Max Unit
30 V
20 V
5V
0.1 µA
0.1 µA
350
300
280
80 mV
110 mV
200 mV
250 mV
1.1 V
0.75 V
100 MHz
20 pF
A,Feb,2012
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet CJ201NL.PDF ] | |
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