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Numéro de référence | CJ2301 | ||
Description | MOSFETS | ||
Fabricant | JCST | ||
Logo | |||
1 Page
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2301 P-Channel 20-V(D-S) MOSFET
FEATURE
TrenchFET Power MOSFET
APPLICATIONS
z Load Switch for Portable Devices
z DC/DC Converter
MARKING: S1
SOT-23
1. GATE
2. SOURCE
3. DRAIN
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient(t ≤5s)
Junction Temperature
Storage Temperature
VDS
VGS
ID
IDM
IS
PD
R θJA
TJ
Tstg
Value
-20
±8
-2.3
-10
-0.72
0.35
357
150
-55 ~+150
Unit
V
A
W
℃/W
℃
B,Apr,2012
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Pages | Pages 3 | ||
Télécharger | [ CJ2301 ] |
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