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Numéro de référence | M48Z512AV | ||
Description | 4 Mbit (512 Kbit x 8) ZEROPOWER SRAM | ||
Fabricant | STMicroelectronics | ||
Logo | |||
1 Page
M48Z512A
M48Z512AY, M48Z512AV
4 Mbit (512 Kbit x 8) ZEROPOWER® SRAM
Not recommended for new design
Features
■ Integrated, ultra low power SRAM, power-fail
control circuit, and battery
■ Conventional SRAM operation; unlimited
)WRITE cycles
t(s■ 10 years of data retention in the absence of
cpower
du■ Automatic power-fail chip deselect and WRITE
roprotection
P■ Two WRITE protect voltages:
te(VPFD = power-fail deselect voltage)
le– M48Z512A: VCC = 4.75 to 5.5 V;
4.5 V ≤ VPFD ≤ 4.75 V
so– M48Z512AY: VCC = 4.5 to 5.5 V;
b4.2 V ≤ VPFD ≤ 4.5 V
O– M48Z512AV: VCC = 3.0 to 3.6 V;
-2.8 V ≤ VPFD ≤ 3.0 V
t(s)■ Battery internally isolated until power is applied
c■ Pin and function compatible with JEDEC
ustandard 512 K x 8 SRAMs
rod■ PMDIP32 is an ECOPACK® package
■ RoHS compliant
Obsolete P– Lead-free second level interconnect
32
1
PMDIP32 module
Description
The M48Z512A/Y/V ZEROPOWER® RAM is a
non-volatile, 4,194,304-bit static RAM organized
as 524,288 words by 8 bits. The devices combine
an internal lithium battery, a CMOS SRAM and a
control circuit in a plastic, 32-pin DIP module.
June 2011
Doc ID 5146 Rev 9
This is information on a product still in production but not recommended for new designs.
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www.st.com
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Pages | Pages 21 | ||
Télécharger | [ M48Z512AV ] |
No | Description détaillée | Fabricant |
M48Z512A | 4 Mbit (512 Kbit x 8) ZEROPOWER SRAM | ST Microelectronics |
M48Z512AV | 4 Mbit (512 Kbit x 8) ZEROPOWER SRAM | STMicroelectronics |
M48Z512AY | 4 Mbit (512 Kbit x 8) ZEROPOWER SRAM | ST Microelectronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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