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Numéro de référence | M25PE20 | ||
Description | 2Mb and 1Mb 3V NOR Serial Flash Memory | ||
Fabricant | Micron | ||
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1 Page
M25PE20, M25PE10 Serial Flash Embedded Memory
Features
M25PE20/M25PE10 2Mb and 1Mb
3V NOR Serial Flash Memory
Serial Flash Memory with Byte Alterability, 75 MHz SPI bus, Standard
Pinout
Features
• 1Mb or 2Mb of page-erasable Flash memory
• 2.7V to 3.6V single supply voltage
• SPI bus compatible serial interface
• 75 MHz clock rate (maximum)
• Page size: 256 bytes
– Page write in 11ms (TYP)
– Page program in 0.8ms (TYP)
– Page erase in 10ms (TYP)
• Subsector erase: 32Kb
– Sector erase: 512Kb
– Bulk erase: 1Mb for M25PE10; 2Mb for M25PE20
• Deep power-down mode: 1µA (TYP)
• Electronic signature
– JEDEC standard 2-byte signature (8012h for
M25PE20; 8011h for M25PE10)
• Software write-protection on a 64KB sector basis
• More than 100,000 write cycles per sector
• More than 20 years of data retention
• Hardware write protection of the memory area se-
lected using the BP0 and BP1 bits
• Packages (RoHS compliant)
– SO8N (MN) 150 mil width
– VFQFPN8 (MP) 6mm x 5mm
• Automotive grade parts available
PDF: 09005aef845660ef
m25pe20_10.pdf - Rev. C 3/13 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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Pages | Pages 30 | ||
Télécharger | [ M25PE20 ] |
No | Description détaillée | Fabricant |
M25PE20 | 2Mb and 1Mb 3V NOR Serial Flash Memory | Micron |
M25PE20 | (M25PE10 / M25PE20) Page-Erasable Serial Flash Memories | ST Microelectronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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