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ZPSEMI - N-Channel Power MOSFET / Transistor

Numéro de référence CJ1012
Description N-Channel Power MOSFET / Transistor
Fabricant ZPSEMI 
Logo ZPSEMI 





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CJ1012 fiche technique
CJ1012
SOT-523 Plastic-Encapsulate MOSFETS
CJ1012 N-Channel Power MOSFET
General Description
This Single N-Channel MOSFET has been designed using advanced
Power Trench process to optimize the RDS(ON).
FEATURE
High-Side Switching
Low On-Resistance
Low Threshold
Fast Switching Speed
ESD protected up to 2KV
SOT-523
1. GATE
2. SOURCE
3. DRAIN
APPLICATIONS
Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current -Pulsed(note1)
Power Dissipation (note 2 , Ta=25)
Maximum Power Dissipation (note 3 , Tc=25)
Thermal Resistance from Junction to Ambient
Thermal Resistance from Junction to Case
Storage Temperature
Junction Temperature
Symbol
VDSS
VGS
ID(DC)
IDM(pulse)
PD
RθJA
RθJC
Tj
Tstg
Value
20
±12
500
1000
150
275
833
455
150
-55 ~+150
Units
V
mA
mW
/W
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