(PDF) 2SA1615-Z Datasheet - Silicon PNP Power Transistor

Número de pieza	2SA1615-Z
Descripción	Silicon PNP Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1615-Z DESCRIPTION ·Large current capacity:IC(DC)= -10A IC(pulse)=-15A ·High hFE and low saturation voltage: hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency DC/AC converters due to the fast switching speed ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature -15 A 15 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark 1 page

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PDF 2SA1615-Z Data sheet ( Hoja de datos )