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Numéro de référence | 2SA1225 | ||
Description | Silicon PNP Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1225
DESCRIPTION
·High transition frequency
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·Complementary to 2SC2983
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-160
V
VCEO Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-1.5 A
PC
Total Power Dissipation
@ TC=25℃
TJ Junction Temperature
1W
150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ 2SA1225 ] |
No | Description détaillée | Fabricant |
2SA1220 | PNP/NPN SILICON EPITAXIAL TRANSISTOR | ETC |
2SA1220 | SILICON POWER TRANSISTOR | SavantIC |
2SA1220A | PNP/NPN SILICON EPITAXIAL TRANSISTOR | ETC |
2SA1220A | SILICON POWER TRANSISTOR | SavantIC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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