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2SA1225 fiches techniques PDF

Inchange Semiconductor - Silicon PNP Power Transistor

Numéro de référence 2SA1225
Description Silicon PNP Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SA1225 fiche technique
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1225
DESCRIPTION
·High transition frequency
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·Complementary to 2SC2983
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-160
V
VCEO Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-1.5 A
PC
Total Power Dissipation
@ TC=25
TJ Junction Temperature
1W
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
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