|
|
PDF 2SA1069 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1069 | |
| Descripción | PNP SILICON EPITAXIAL TRANSISTOR | |
| Fabricantes | Renesas | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SA1069 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
DATA SHEET
SILICON POWER TRANSISTORS
2SA1069, 1069A
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1069/1069A are the mold power transistors developed for <R> ORDERING INFORMATION
high-speed switching, and is ideal for use as a driver in devices such
as switching regulators, DC/DC converters, and high-frequency power
amplifiers.
Part No.
2SA1069
2SA1069A
Package
TO-220AB
(MP-25)
FEATURES
• Low collector saturation voltage
2SA1069-Z
2SA1069A-Z
TO-220SMD
(MP-25Z)
• Fast switching speed
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT
Tj
Tstg
Conditions
PW ≤ 300 μs,
duty cycle ≤ 10%
TC = 25°C
TA = 25°C
Ratings
−80
−60/−80
−12
−5.0
−10
Unit
V
V
V
A
A
−2.5
30
1.5
150
−55 to +150
A
W
W
°C
°C
<R>
(TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14855EJ3V1DS00 (3rd edition)
Date Published January 2010 N
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an ‘‘<R>"
in the PDF file and specifying it in the ‘‘Find what:’’ field.
2002
1 page  
2SA1069, 1069A
PACKAGE DRAWING (UNIT: mm)
(1) TO-220AB (MP-25)
<R> (2) TO-220SMD (MP-25Z) Note
10.6 MAX.
10.0 TYP.
φ 3.6±0.2
4.8 MAX.
1.3±0.2
10 TYP.
4
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
123
1.4±0.2
0.75±0.3
2.54 TYP.
2.54 TYP0..50R.8TRYPT.YP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note This package is produced only in Japan.
Data Sheet D14855EJ3V1DS
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SA1069.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SA1060 | SILICON EPITAXAL BASE VLESA TRANSISTOR |  Panasonic Semiconductor |
| 2SA1060 | Silicon POwer Transistors |  SavantIC |
| 2SA1060 | POWER TRANSISTOR |  Inchange Semiconductor |
| 2SA1060 | Trans GP BJT PNP 60V 5A 3-Pin(3+Tab) TO-220AB |  New Jersey Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |