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2SA1069-Z Datasheet دیتاشیت PDF دانلود

دیتاشیت - Inchange Semiconductor - Silicon PNP Power Transistor

شماره قطعه 2SA1069-Z
شرح مفصل Silicon PNP Power Transistor
تولید کننده Inchange Semiconductor 
آرم Inchange Semiconductor 


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2SA1069-Z شرح
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1069-Z
DESCRIPTION
·Low Collector Saturation Voltage
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high-speed switching, and is ideal for use
as a driver in devices such as switching regulators,DC/DC
converters, and high frequency power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80 V
VCEO Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-12 V
IC Collector Current-Continuous
-5 A
ICM Collector Current-Peak
-10 A
IB Base Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Total Power Dissipation
@ TC=25
TJ Junction Temperature
-2.5 A
1.5
W
30
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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