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2N6667 fiches techniques PDF

Inchange Semiconductor - Silicon PNP Power Transistor

Numéro de référence 2N6667
Description Silicon PNP Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2N6667 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2N6667
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= -5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -5A
·Complement to Type 2N6387
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60 V
VCEO
Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-10 A
ICM Collector Current-Peak
-15 A
IB Base Current-DC
Collector Power Dissipation
PC
TC=25
Collector Power Dissipation
Ta=25
Tj Junction Temperature
-250
65
2
150
mA
W
Tstg Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.92 /W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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