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S29GL128N fiches techniques PDF

Cypress Semiconductor - 3.0V single power flash memory

Numéro de référence S29GL128N
Description 3.0V single power flash memory
Fabricant Cypress Semiconductor 
Logo Cypress Semiconductor 





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S29GL128N fiche technique
S29GL512N
S29GL256N
S29GL128N
512, 256, 128 Mbit, 3 V, Page Flash
Featuring 110 nm MirrorBit
This product family has been retired and is not recommended for designs. For new and current designs, S29GL128S, S29GL256S,
and S29GL512T supersede the S29GL128N, S29GL256N, and S29GL512N respectively. These are the factory-recommended
migration paths. Please refer to the S29GL-S and S29GL-T Family data sheets for specifications and ordering information.
Distinctive Characteristics
Architectural Advantages
Single Power Supply Operation
– 3 volt read, erase, and program operations
Enhanced VersatileI/OControl
– All input levels (address, control, and DQ input levels) and outputs
are determined by voltage on VIO input. VIO range is 1.65 to VCC
Manufactured on 110 nm MirrorBit Process Technology
Secured Silicon Sector Region
– 128-word/256-byte sector for permanent, secure identification
through an 8-word/16-byte random Electronic Serial Number,
accessible through a command sequence
– May be programmed and locked at the factory or by the customer
Flexible Sector Architecture
– S29GL512N: Five hundred twelve 64 Kword (128 Kbyte) sectors
– S29GL256N: Two hundred fifty-six 64 Kword (128 Kbyte) sectors
– S29GL128N: One hundred twenty-eight 64 Kword (128 Kbyte)
sectors
Compatibility with JEDEC Standards
– Provides pinout and software compatibility for single-power supply
flash, and superior inadvertent write protection
100,000 Erase Cycles per sector typical
20-year Data Retention typical
Performance Characteristics
High Performance
– 90 ns access time (S29GL128N, S29GL256N)
– 100 ns (S29GL512N)
– 8-word/16-byte page read buffer
– 25 ns page read times
– 16-word/32-byte write buffer reduces overall programming time for
multiple-word updates
Low Power Consumption (typical values at 3.0 V, 5 MHz)
– 25 mA typical active read current;
– 50 mA typical erase/program current
– 1 µA typical standby mode current
Package Options
– 56-pin TSOP
– 64-ball Fortified BGA
Software & Hardware Features
Software Features
– Program Suspend and Resume: read other sectors before
programming operation is completed
– Erase Suspend and Resume: read/program other sectors before
an erase operation is completed
– Data# polling and toggle bits provide status
– Unlock Bypass Program command reduces overall multiple-word
programming time
– CFI (Common Flash Interface) compliant: allows host system to
identify and accommodate multiple flash devices
Hardware Features
– Advanced Sector Protection
– WP#/ACC input accelerates programming time (when high
voltage is applied) for greater throughput during system
production. Protects first or last sector regardless of sector
protection settings
– Hardware reset input (RESET#) resets device
– Ready/Busy# output (RY/BY#) detects program or erase cycle
completion
Product Availability Table
Density
512 Mb
256 Mb
128 Mb
Init. Access
110 ns
100 ns
110 ns
100 ns
90 ns
110 ns
100 ns
90 ns
VCC
Full
Full
Full
Full
Regulated
Full
Full
Regulated
Availability
Now
Now
Now
Now
Now
Now
Now
Now
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-01522 Rev. *B
• San Jose, CA 95134-1709 • 408-943-2600
Revised January 08, 2016

PagesPages 30
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