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Número de pieza | FDD6N50TM_F085 | |
Descripción | 500V N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDD6N50TM_F085 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! FDD6N50TM_F085
500V N-Channel MOSFET
Features
• 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V
• Low gate charge ( typical 12.8 nC)
• Low Crss ( typical 9 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Qualified to AEC Q101
• RoHS Compliant
November 2010
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
D
G S D-PAK
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
S
Ratings
500
6
3.8
24
±30
270
6
8.9
4.5
89
0.71
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Min.
--
--
Max.
1.4
83
Unit
°C/W
°C/W
©2010 Fairchild Semiconductor Corporation
FDD6N50TM_F085 Rev. C1
1
www.fairchildsemi.com
1 page Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDD6N50TM_F085 Rev. C1
5
www.fairchildsemi.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FDD6N50TM_F085.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDD6N50TM_F085 | 500V N-Channel MOSFET | Fairchild Semiconductor |
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