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2N6421 fiches techniques PDF

Inchange Semiconductor - Silicon PNP Power Transistors

Numéro de référence 2N6421
Description Silicon PNP Power Transistors
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2N6421 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2N6421
DESCRIPTION
·Contunuous Collector Current-IC= -2A
·Power Dissipation-PC= 35W @TC= 25
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.75 V(Max)@ IC = -1A
APPLICATIONS
·Designed for high-speed switching and linear amplifier appli-
cation for high-voltage operational amplifiers, switching regu-
lators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-375
V
VCEO
Collector-Emitter Voltage
-250
V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous
-2.0 A
ICM Collector Current-Peak
-5.0 A
IB Base Current
-1.0 A
PC Collector Power Dissipation@TC=2535
W
TJ Junction Temperature
150
Tstg Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
5.0 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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