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Numéro de référence | 2N6421 | ||
Description | Silicon PNP Power Transistors | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2N6421
DESCRIPTION
·Contunuous Collector Current-IC= -2A
·Power Dissipation-PC= 35W @TC= 25℃
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.75 V(Max)@ IC = -1A
APPLICATIONS
·Designed for high-speed switching and linear amplifier appli-
cation for high-voltage operational amplifiers, switching regu-
lators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-375
V
VCEO
Collector-Emitter Voltage
-250
V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous
-2.0 A
ICM Collector Current-Peak
-5.0 A
IB Base Current
-1.0 A
PC Collector Power Dissipation@TC=25℃ 35
W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
5.0 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ 2N6421 ] |
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