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Inchange Semiconductor - Silicon NPN Power Transistors

Numéro de référence 2N6057
Description Silicon NPN Power Transistors
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2N6057 fiche technique
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlingtion Power Transistor
2N6057
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
hFE = 750 (Min) @ IC = 6A
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 60V(Min)
·Complement to type 2N6050
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60 V
VCEO Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current -Continuous
12 A
ICM Collector Current-Peak
20 A
IB Base Current
0.2 A
PC Collector Power Dissipation@TC=25150
W
TJ Junction Temperature
150
Tstg Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.17
UNIT
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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