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Inchange Semiconductor - Silicon PNP Power Transistors

Numéro de référence 2SB1090
Description Silicon PNP Power Transistors
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SB1090 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
Product Specification
2SB1090
DESCRIPTION
·High Collector Current:: IC= -4A
·Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -3A
·Complement to Type 2SD1568
APPLICATIONS
·Designed for power supplies or a variety of drives in audio
and other equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO Emitter-Base Voltage
-7 V
IC Collector Current-Continuous
-4 A
IB Base Current-Continuous
Total Power Dissipation
@ Ta=25
PC
Total Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-0.8 A
1.3
W
40
150
-55~150
isc websitewww.iscsemi.cn
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