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2N6050 fiches techniques PDF

Inchange Semiconductor - Silicon PNP Power Transistors

Numéro de référence 2N6050
Description Silicon PNP Power Transistors
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2N6050 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
2N6050
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain
·Complement to type 2N6057
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60 V
VCEO Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current -Continuous
-12 A
ICM Collector Current-Peak
-20 A
IB Base Current
-0.2 A
PC Collector Power Dissipation@TC=25150
W
TJ Junction Temperature
Tstg Storage Temperature
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ThermalResistance, Junction to Case
MAX
1.17
UNIT
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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