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PDF 2SB1100 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1100 | |
| Descripción | Silicon PNP Power Transistors | |
| Fabricantes | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB1100
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·High DC Current Gain-
: hFE= 1000(Min)@ IC= -10A
·Complement to Type 2SD1591
APPLICATIONS
·Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-8 V
IC Collector Current-Continuous
-10 A
ICM Collector Current-Pulse
-20 A
IB Base Current-Continuous
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature
-1 A
2
W
30
150 ℃
-55~150 ℃
isc website：www.iscsemi.com1
isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1100.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SB1100 | Silicon PNP Power Transistors | Inchange Semiconductor |
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