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Numéro de référence | 2SB821 | ||
Description | Silicon PNP Power Transistors | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB821
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -40V(Min)
·Good Linearity of hFE
·Low Saturation Voltage
APPLICATIONS
·Designed for use in audio amplifier, voltage regulator,
DC-DC converter and relay driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-50 V
VCEO
Collector-Emitter Voltage
-40 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
-300
250
125
mA
mW
℃
Tstg Storage Temperature Range
-55~125
℃
isc website:www.iscsemi.com1
isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ 2SB821 ] |
No | Description détaillée | Fabricant |
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