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Inchange Semiconductor - Silicon PNP Power Transistors

Numéro de référence 2SB821
Description Silicon PNP Power Transistors
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SB821 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB821
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -40V(Min)
·Good Linearity of hFE
·Low Saturation Voltage
APPLICATIONS
·Designed for use in audio amplifier, voltage regulator,
DC-DC converter and relay driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-50 V
VCEO
Collector-Emitter Voltage
-40 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
-300
250
125
mA
mW
Tstg Storage Temperature Range
-55~125
isc websitewww.iscsemi.com1
isc & iscsemi is registered trademark

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